Pulsed IV Systeme (PIV)

PIV-System by AMCAD Engineering with Gate- und Drain pulse head

In many situations, it is necessary to perform pulsed measurements of component properties; some examples are:

  • Measurement using probes on semiconductor wafers (where sufficient heat dissipation is not possible).
  • During production testing and intermediate production steps without sufficient heat dissipation.
  • Measurements for the characterization of semiconductor properties (e.g., transistor properties as a function of the original working point, pulse characteristics at isothermal environment temperature).

For these measurements, we recommend the PIV System by AMCAD Engineering. A PIV System can be configured from the following components:

  • PIV Controller AM3203 (always required)
  • Gate pulse head for the transistor input AM3211
  • Drain pulse head for the transistor output AM3221
Pulse head
Use Gate- oder Basiseingänge Drain- oder Kollektoranschluss
Maximum pulse voltage +/-25V +250V
Maximum pulse current +/-1A +30A up to 100V
+10A up to 250V
Minimum edge steepness 50ns 50ns
Temporal resolution of the current and voltage


Minimum pulse width ca. 200ns ca. 200ns
Maximum pulse repetition rate 500kHz 500kHz
Maximum DC wattage 3Watt 5Watt
Maximum pulse wattage 10Watt 3kWatt
Number of voltage states 2 2
Digital voltage output resolution 16Bit 18Bit

The PIV System may either be directly controlled by SCPI commands or with the IVCAD SW by AMCAD. The IVCAD SW allows a simple and reliable integration of the PIV System into the Maury-Microwave measurement systems. The most frequent applications are:

  • Measurement of pulsed current and voltage characteristics in the time domain. The IV-CAD SW not only provides comprehensive graphical functions for displaying the measurement values, but also allows corrections with a de-embedding model in order to achieve measurements at the input contacts of the tested component that are as precise as possible.
  • Measurement of DC current and voltage characteristics.
  • Current and voltage characteristics depending on the initial state (e. g. for transistors, the initial state may be an arbitrary DC working point, which is then switched to the measurement working point with a high edge steepness).
  • Measurement of pulsed S parameters (in this case, the PIV System with the IV-CAD SW will control the network analyzer).
  • Load-pull measurements with pulsed S parameters (the PIV system, the tuner and the network analyzer are controlled by the IV-CAD SW).